Using Inhomogeneityofheterostructure Andoptimizationof Annealing Tode- Creasedimensionsmultyemitterhetero- Transistors
نویسنده
چکیده
Framework this paper we discussed an approach to manufacture a multiemitter heterotransistor. The introduced approach is a branch of recently introduced approach and based on doping by diffusion or by ion implantation of required part of heterostructure and optimization of dopant and/or radiation defects. The heterostructure should has special configuration.
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